Simulation of islands and vacancy structures for Si/Ge-covered Si(001) using a hybrid MC-MD algorithm
نویسندگان
چکیده
A classical hybrid MC-MD algorithm is applied to study physically interesting phenomena, such as island stability and formation of dimer-vacancy structures, on Si/Ge-covered Si(001). The method introduces collective moves into the standard MC algorithm to allow the system to escape from metastable states. Simulation results are found to be in good qualitative agreement with experiments.
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